PHI X-tool

Ion generation and surface sensitivity

• A high-energy primary ion bombardment on the surface of the sample excites atomic and molecular fragments
• Only a small portion of the excited particles leave the surface in an ionic state and are detected by a mass analyzer
• For inorganic materials, atomic ion percentage content>10%
• For organic materials, the percentage content of atomic and molecular ion fragments can range from. 001% to 1%
• Particles excited from only two molecular layers on the surface can leave the surface in an ionic state

Main functions of TOF-SIMS

• Collect ion mass spectrometry for characterization of surface elements (atomic ions), isotopes, and molecular chemical structures (through molecular ion fragments)
• Obtain component distribution images through point or surface scanning (2D imaging), and observe the distribution of different components on the same line or surface
• Deep analysis and 3D imaging can analyze different film layer structures and component depth distribution information: characterization of multi-layer film layer structures, component doping depth, diffusion, adsorption, and other characterizations

• All element detection - H, He, Li, etc. (H~U)
• Isotope detection -2H, 3H, He, Li, 18O, 13C, etc
• Detailed molecular information - organic and inorganic
• Molecular imaging
• Parallel detection - Each pixel in the image has a corresponding total mass spectrum
• Surface sensitivity -1-3 atomic/molecular layers on the sample surface
• High sensitivity of trace analysis -0.1 to 1 ppm atomic concentration
• Rapid data collection - typically 1-15 minutes (surface IMS)
• High spatial resolution
• <70 nm (in imaging mode)
• <0.5 µ m (while maintaining good quality resolution)
• Surface physical morphology information
• SEI (secondary electron image) emitted by ion bombardment<60 nm
• Large stereo receiving angle~180o
• Can analyze all materials - conductors, semiconductors, and insulation materials